TM
DOMINANT
AlInGaP : DDx-EJS
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25˚C
Vf @ If = 20mA
Typ. (V)
V @ I = 10uA
r
r
Part Number
Min. (V)
Max. (V)
Min. (V)
1.8
12
DDx-EJ
2.0
2.6
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Vf Bining (Optional)
Vf @ If = 20mA
Forward Voltage (V)
1.55 ... 1.85
01
1.85 ... 2.15
2.15 ... 2.45
2.45 ... 2.65
02
03
04
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
30
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage
1000
mA
V
12
ESD Thereshold (HBM)
2
kV
˚C
LED juction temperature
125
Operating temperature
-40 … +100
-40 … +100
78
˚C
Storage temperature
˚C
Power dissipation (at room temperature)
mW
15/11/2005 V2.0
3
DOMINANT [ DOMINANT SEMICONDUCTORS ]
