TM
DOMINANT
Gap : DDx-GJS
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25˚C
V @ I = 10µA
Vf @ If = 20mA
Typ. (V) Max. (V)
r
r
Chip Type
Min(V)
2.6
GaP
5
2.2
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Binning (Optional)
Vf Bin @ 20mA
Forward Voltage (V)
1.55 … 1.85
01
1.85 … 2.15
2.15 … 2.45
2.45 … 2.75
02
03
04
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Please consult sales and marketing for special part number to incorporate Vf bining.
Absolute Maximum Ratings
Maximum Value
Unit
DC forward current
30
mA
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
500
mA
V
5
ESD Thereshold (HBM)
2
kV
˚C
LED juction temperature
100
Operating temperature
-40 … +100
-40 … +100
75
˚C
Storage temperature
˚C
Power dissipation (at room temperature)
mW
06/09/2005 V4.0
4
DOMINANT [ DOMINANT SEMICONDUCTORS ]
