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DDR-EJS-U1 参数 Datasheet PDF下载

DDR-EJS-U1图片预览
型号: DDR-EJS-U1
PDF下载: 下载PDF文件 查看货源
内容描述: LED的AlInGaP [LED AlInGaP]
分类和应用:
文件页数/大小: 12 页 / 782 K
品牌: DOMINANT [ DOMINANT SEMICONDUCTORS ]
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DOMINANT
TM
Semiconductors
Innovating Illumination
AlInGaP : DDx-EJS
Electrical Characteristics at Ta=25˚C
Part Number
DDx-EJ
Vf @ If = 20mA
Min. (V)
1.8
V
r
@ I
r
= 10uA
Max. (V)
2.6
Typ. (V)
2.0
Min. (V)
12
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Vf Bining (Optional)
Vf @ If = 20mA
01
02
03
04
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing for special part number to incorporate Vf binning.
Forward Voltage (V)
1.55 ... 1.85
1.85 ... 2.15
2.15 ... 2.45
2.45 ... 2.65
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
1000
12
2
125
-40 … +100
-40 … +100
78
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
3
15/11/2005 V2.0