DOMINANT
TM
Innovating Illumination
Semiconductors
GaN : DDx-KJS-I1
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage (IR = 10 µA)
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
th JA
- Junction / solder point, R
th JS
(Mounting on FR4 PCB, pad size >= 16 mm
2 per pad)
500
280
K/W
K/W
20
200
5
2000
125
-40 … +100
-40 … +100
85
Unit
mA
mA
V
V
˚C
˚C
˚C
mW
Characteristics (Ta = 25˚C)
Symbol
Temperature coefficient of
dom (typ)
I
F
= 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of V
F (typ)
I
F
= 10mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of I
V (typ)
I
F
= 10mA; 0 ˚C <= T <= 100 ˚C
TC
dom (typ)
Part Number
DDB-KJS
Value
0.01
Unit
nm / K
TC
V
DDB-KJS
-2.60
mV / K
TC
IV
DDB-KJS
-0.30
mcd / K
3
27/06/2007 V(O)