DOMINANT
TM
Semiconductors
Innovating Illumination
GaN : DDx-KJS-I1
Forward Current Vs Forward Voltage
35
30
Relative Luminous Intensity Vs Forward Current
Relative Intensity; Normalized at 10 mA
2.2
2
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35
1.8
Forward Current, mA
25
20
15
10
5
0
3
3.5
4
4.5
5
Forward Current, mA
Forward Voltage, V
Maximum Forward Current Vs Temperature
25
Relative Intensity Vs Wavelength
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Forward Current, mA
15
10
5
0
0
10
20
30
40
50
60
70
80
90 100
Relative Intensity
20
350
400
450
500
550
600
650
Ambient Temperature
Wavelength, nm
Allowable Forward Current Vs Duty Ratio
Allowable Forward Current Vs Duty Ratio
(Ta=25 Deg C, Tp<10us)
1000
Radiation Pattern
30°
20°
10°
0°
1.0
Allowable Forward Current, mA
40°
100
0.8
50°
0.6
10
60°
70°
0.4
0.2
1
1
10
100
80°
90°
0
Duty Ratio, %
4
27/06/2007 V(O)
DOMINANT [ DOMINANT SEMICONDUCTORS ]
