GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
FEATURES
•
Planar die construction
•
500mW Power Dissipation
•
Ideally Suited for Automated Assembly Processes
•
High temperature soldering : 260°C /10 seconds at terminals
•
Glass package has Underwriters Laboratory Flammability
Classification
•
In compliance with EU RoHS 2002/95/EC directives
DO-35
Φ
0.5 ±
0.1
•
Case: Molded Glass DO-35
•
Terminals: Axial leads, solderable per MIL-STD-202G, Method 208
•
Polarity:
See Diagram Below
•
Mounting position:Any
•
Weight: 0.13 gram
Φ
1.8 ±
MECHANICAL DATA
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(T
A
=25℃)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25℃
Junction temperature
Storage temperature range
Value
Units
P
tot
T
J
T
STG
500
175
-65 to +175
26 ± 1
3.8 ± 0.2
0.2
26 ± 1
mW
℃
℃
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(T
A
=25℃)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=100mA
Min
Typ
Max
0.3
1.0
Units
R
thA
V
F
K
/ mW
V
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
DIOTECH [ DIOTECH COMPANY. ]
