1N60 THRU 1N60P
SMALL SIGNAL SCHOTTKY DIODE
Reverse Voltage - 40 to 45 Volts
Forward Current - 0.03 / 0.05 Ampere
FEATURES
Metal-on-silicon junction, majority carrier conduction
●
High current capability, Low forward voltage drop
●
Extremely low reverse current Ir
●
Ultra speed switching characteristics
●
Small temperature coefficient of forward characteristics
●
Satisfactory Wave detection efficiency
●
For use in RECORDER TV RADIO TELEPHONE as
detectors, super high speed switching c rcuits,
small current rectifier
●
DO-35
Φ
0.5 ±
0.1
Case:
DO-35
glass case
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
: 0.13 grams
All Dimensions in mm
ABSOLUTE RATINGS(LIMITING VALUES)
Value
26 ± 1
MECHANICAL DATA
Φ
1.8 ±
3.8 ± 0.2
0.2
26 ± 1
Symblos
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
T
A
=25 C
Units
1N60P
45
50
400
1N60
40
30
150
-65 to+125
230
V
RRM
I
F
I
FSM
T
STG
/T
J
T
L
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Value
Symblos
Parameters
Test Conditions
I
F
=1mA
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
Min.
Typ.
0.32
0.24
0.65
0.65
1.0
5.0
2.0
Max.
0.5
0.5
1.0
1.0
5.0
10.0
Units
Volts
V
F
I
R
C
J
t
rr
R
JA
Forward Voltage
Reverse Current
Junction Capacitance
Detection Efficiency(See diagram 4)
Reverse Recovery time
Junction Ambient Thermal Resistance
I
F
=30mA
I
F
=200mA
V
R
=15V
V
R
=1V f=1MHz
V
R
=10V f=1MHz
A
pF
6.0
60
V
I
=3V f=30MHz C
L
=10pF R
L
=3.8k
I
F
=I
R
=1mA Irr=1mA Rc=100
1
400
ns
C /W
DIOTECH [ DIOTECH COMPANY. ]
