1N4148 / 1N4448
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
Switching diodes
●
500mw power dissipation
●
High temperature soldering guaranteed
250℃/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
●
●
0.079(2.0)
MAX
DO-34(GLASS)
DO-35(GLASS)
1.0 2(26.0)
MIN.
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
MECHANICAL DATA
Case
: DO-34\DO-35 glass sealed envelope.
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.09 grams(DO-34)
0.005 ounce, 0.14 grams(DO-35)
0.106 (2.9)
MAX
0.165 (4.2)
MAX
1.0 2(26.0)
MIN.
0.017(0.42)
TYP
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings
(
Characteristic
Non-Repetitive Peak Voltage
T =25 C Unless otherwise noted)
A
Symbol
V
RM
V
PWM
V
RWM
V
R
I
O
I
FSM
P
d
RθJA
TJ
,
TSTG
1N4148 / 1N4448
100
75
150
2.0
500
300
-65 to +175
Unit
V
V
mA
A
mW
K/W
C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
(1)
Non-Repetitive Peak Forward Surge Current
@t=1.0us
Power Dissipation
Thermal Resistance Junction to Ambient
Operating and Strorage Temperature Range
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage
I
R
= 100ua
Forward Voltage
I
F
=10 mA
1N4148
1N4448 I
F
=5 mA
I
F
=100 mA
Leakage Current
V
R
=20V
V
R
=75V
V
R
=75V, Tj=150 C
Junction Capacitance
Reverse Recovery Time
I
F
=10 mA, I
R
=1mA, V
R
=6V, R
L
=100Ω
( T
A
=25 C Unless otherwise noted)
Symbol
V(BR)R
Min
100
Max
-
Unit
V
VF
0.62
1.0
0.72
1.0
25
5
50
4
4
V
IR
Cj
T
RR
-
-
-
-
-
µA
PF
nS
Note: 1.Valid Provided that device Terminals are Kept at Ambient Temperature.
DIOTECH [ DIOTECH COMPANY. ]
