General Purpose Transistors
TIP32, TIP32A ... C
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter cutoff current – Kollektorreststrom
- V
CE
= 30 V
- V
CE
= 60 V
- V
CE
= rated V
CE0
Small signal current gain
Kleinsignal-Stromverstärkung
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 10 V, - I
C
= 0.5 A, f = 1 MHz
Switching times – Schaltzeiten
turn-on time
turn-off time
- I
Con
= 1 A,
- I
Bon
= I
Boff
= 100 mA
t
on
t
off
–
–
f
T
3 MHz
TIP32
TIP32A
TIP32B
TIP32C
- I
CE0
- I
CE0
- I
CE0
- I
CE0
- I
CES
–
–
–
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
Max.
300 nA
300 nA
300 nA
300 nA
200 nA
h-Parameters at - V
CE
= 10 V, - I
C
= 0.5 A, f = 1 kHz
h
fe
20
–
–
–
300 ns
1 µs
–
–
–
62 K/W
1
)
3 K/W
9 ± 10% lb.in.
1 ± 10% Nm
TIP31, TIP31A
TIP31B, TIP31C
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
R
thA
R
thC
M4
1
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
29
DIOTEC [ DIOTEC SEMICONDUCTOR ]
