MMBTA42 / MMBTA43
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
hFE
hFE
hFE
25
40
40
–
–
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 20 mA, f = 100 MHz
fT
50 MHz
–
–
Collector-Base capacitance – Kollektor-Basis-Kapazität
VCB = 20 V, IE =ie = 0, f = 1 MHz
MMBTA42
MMBTA43
CCB0
CCB0
–
–
–
–
3 pF
4 pF
Thermal resistance junction – ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBTA92, MMBTA93
Marking - Stempelung
MMBTA42 = 1D
MMBTA43 = 1E
120
[%]
100
80
60
40
20
Ptot
0
0
TA
100
150
50
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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