MMBT3904
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
V
CE
= 30 V, V
EB
= 3 V
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- V
CE
= 30 V, - V
EB
= 3 V
Gain-Bandwidth Product – Transitfrequenz
I
C
= 10 mA, V
CE
= 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB
= 5 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
V
EB
= 0.5 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
V
CE
= 5 V, I
C
= 1 µA, R
G
= 1 kΩ, f = 1 kHz
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
fall time
V
CC
= 3 V, V
BE
= 0.5 V
I
C
= 10 mA, I
B1
= 1mA
V
CC
= 3 V, I
C
= 10 mA,
I
B1
= I
B2
= 1 mA
t
d
t
r
t
s
t
f
R
thA
–
–
–
–
–
–
–
–
< 200 K/W
1
)
MMBT3906
MMBT3904 = 1AM
35 ns
35 ns
200 ns
50 ns
F
–
–
5 dB
C
EBO
–
–
8 pf
C
CBO
–
–
4 pF
f
T
300 MHz
–
–
I
EBV
–
–-
50 nA
I
CBX
–
–
50 nA
V
BEsat
V
BEsat
0.65 V
–
–
–
0.85 V
0.95 V
V
CEsat
V
CEsat
–
–
–
–
0.2 V
0.3 V
Kennwerte (T
j
= 25°C)
Typ.
Max.
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
DIOTEC [ DIOTEC SEMICONDUCTOR ]
