MMBT2222, MMBT2222A
NPN
Switching Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-05-04
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
250 mW
SOT-23
(TO-236)
0.01 g
1.1
Plastic case
Kunststoffgehäuse
1.3
±0.1
Type
Code
1
2
2.5
max
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CE0
V
CB0
V
EB0
P
tot
I
C
T
j
T
S
Grenzwerte (T
A
= 25°C)
MMBT2222
30 V
60 V
5V
250 mW
1
)
600 mA
150°C
- 65…+ 150°C
MMBT2222A
40 V
75 V
6V
Characteristics (T
j
= 25°C)
Min.
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, V
CB
= 50 V
I
E
= 0, V
CB
= 60 V
I
E
= 0, V
CB
= 50 V, T
j
= 150°C
I
E
= 0, V
CB
= 60 V, T
j
= 150°C
I
C
= 0, V
EB
= 3 V
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
I
CB0
I
CB0
I
CB0
I
CB0
I
EB0
V
CEsat
V
CEsat
V
CEsat
V
CEsat
–
–
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
Max.
10 nA
10 nA
10 µA
10 µA
Emitter-Base cutoff current – Emitterreststrom
MMBT2222A
–
–
100 nA
Collector saturation voltage – Kollektor-Sättigungsspannung
1
)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
–
–
–
–
–
–
–
–
400 mV
300 mV
1.6 V
1V
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
20
DIOTEC [ DIOTEC SEMICONDUCTOR ]
