General Purpose Transistors
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 30...15 kHz
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 10 ... 50 Hz
BC 856...
F
BC 858
BC 859/860
BC 859
BC 860
F
F
F
–
–
–
–
f
T
C
CB0
100 MHz
–
–
–
- I
EB0
–
–
- I
CB0
- I
CB0
–
–
–
–
- V
BEon
- V
BEon
600 mV
–
-V
CEsat
-V
CEsat
- V
BEsat
- V
BEsat
–
–
–
–
BC 856 ... BC 860
Kennwerte (T
j
= 25
/
C)
Typ.
90 mV
200 mV
700 mV
900 mV
650 mV
–
Max.
250 mV
600 mV
–
–
750 mV
820 mV
15 nA
5
:
A
100 nA
–
6 pF
Base saturation voltage – Basis-Sättigungsspannung
1
)
Collector-Base Capacitance – Kollektor-Basis-Kapazität
2 dB
1 dB
1.2 dB
1.2 dB
10 dB
4 dB
4 dB
4 dB
0.11
:
V
420 K/W
2
)
Equivalent noise voltage – Äquivalente Rauschspannung
BC 860
u
F
–
R
thA
BC 846 ... BC 850
BC 856A = 3A
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 857A = 3E
BC 858A = 3J
BC 856B = 3B
BC 857B = 3F
BC 858B = 3K
BC 859B = 4B
BC 860B = 4F
BC 857C = 3G
BC 858C = 3L
BC 859C = 4C
BC 860C = 4G
–
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhältnis
#
2%
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
15
DIOTEC [ DIOTEC SEMICONDUCTOR ]
