General Purpose Transistors
Characteristics, T
j
= 25
/
C
Min.
Collector saturation voltage – Kollektor-Sättigungsspg.
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
V
CE
= 1 V, - I
C
= 500 mA
I
E
= 0, V
CB
= 20 V
I
E
= 0, V
CB
= 20 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, V
EB
= 4 V
Gain-Bandwidth Product – Transitfrequenz
V
CE
= 5 V, I
C
= 10 mA, f = 50 MHz
V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstärkungsgruppen pro Typ
BC 817-16W = 6A
BC 817W = 6D
BC 818-16W = 6E
BC 818W = 6H
BC 818-25W = 6F
BC 817W / BC 818W
Kennwerte, T
j
= 25
/
C
Typ.
–
–
–
–
–
–
170 MHz
6 pF
Max.
0.7 V
1.2 V
1.2 V
100 nA
5
:
A
100 nA
–
–
620 K/W
1
)
V
CEsat
V
BEsat
V
BE
I
CB0
I
CB0
I
EB0
f
T
C
CB0
–
–
–
–
–
–
100 MHz
–
R
thA
Base saturation voltage – Basis-Sättigungsspannung
Collector-Base cutoff current – Kollektorreststrom
Collector-Base Capacitance – Kollektor-Basis-Kapazität
BC 807W / BC 808W
BC 817-25W = 6B
BC 817-40W = 6C
BC 818-40W = 6G
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
9
DIOTEC [ DIOTEC SEMICONDUCTOR ]
