2N4401
2N4401
NPN
Version 2006-09-12
Power dissipation
Verlustleistung
CBE
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
625 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
18
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
V
CEO
V
CBO
V
EBO
P
tot
I
C
T
j
T
S
9
Grenzwerte (T
A
= 25°C)
2N4401
40 V
60 V
6V
250 mW
1
)
600 mA
-55...+150°C
-55…+150°C
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
0.1 mA,
1 mA,
10 mA,
150 mA,
500 mA,
V
CE
V
CE
V
CE
V
CE
V
CE
=
=
=
=
=
1
1
1
1
2
V
V
V
V
V
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
20
40
80
100
40
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
Max.
–
–
–
300
–
0.40 V
0.75 V
0.95 V
1.2 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
0.75 V
–
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
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1
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