2N3906
2N3906
PNP
Version 2006-09-12
Power dissipation
Verlustleistung
CBE
Si-Epitaxial-Planar Switching Transistors
Si-Epitaxial-Planar Schalttransistoren
PNP
625 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
18
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EBO
P
tot
- I
C
T
j
T
S
9
Grenzwerte (T
A
= 25°C)
2N3906
40 V
40 V
5V
625 mW
1
)
200 mA
-55...+150°C
-55…+150°C
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
-
-
-
-
-
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
0.1 mA,
1 mA,
10 mA,
50 mA,
100 mA,
-
-
-
-
-
V
CE
V
CE
V
CE
V
CE
V
CE
=
=
=
=
=
1
1
1
1
1
V
V
V
V
V
h
FE
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
60
80
100
60
30
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
Max.
–
–
300
–
–
0.25 V
0.40 V
0.85 V
0.95 V
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung
2
)
0.65 V
–
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
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1
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