2N3905, 2N3906
PNP
Version 2004-01-20
Switching Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
625 mW
TO-92
(10D3)
0.18 g
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25
/
C)
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak collector current – Kollektorspitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CE0
- V
EB0
P
tot
- I
C
- I
CM
T
j
T
S
Grenzwerte (T
A
= 25
/
C)
2N3905, 2N3906
40 V
40 V
5V
625 mW
1
)
100 mA
200 mA
150
/
C
- 55…+ 150
/
C
Characteristics (T
j
= 25
/
C)
Min.
Collector saturation volt. – Kollektor-Sättigungsspannung
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
- I
C
= 10 mA, - I
B
= 1 mA
- I
C
= 50 mA, - I
B
= 5 mA
Collector cutoff current – Kollektorreststrom
- V
CE
= 30 V, - V
EB
= 3 V
Emitter cutoff current – Emitterreststrom
- V
CE
= 30 V, - V
EB
= 3 V
- I
EBV
–
- I
CEV
–
- V
CEsat
- V
CEsat
- V
BEsat
- V
BEsat
–
–
–
–
Kennwerte (T
j
= 25
/
C)
Typ.
–
–
–
–
–
–
Max.
250 mV
400 mV
850 mV
950 mV
50 nA
50 nA
Base saturation voltage – Basis-Sättigungsspannung
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
32
DIOTEC [ DIOTEC SEMICONDUCTOR ]
