MMBTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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•
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Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBTA92)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 4 and 5)
Qualified to AEC-Q101 Standards for High
Reliability
A
C
SOT-23
Dim
B
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
E
TOP VIEW
E
D
G
H
K
J
L
B
C
D
M
Mechanical Data
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Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking (See Page 2): K3M
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
E
G
H
J
K
L
M
α
•
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θJA
T
j
, T
STG
Value
300
300
6.0
500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
300
300
6.0
⎯
⎯
25
40
40
⎯
⎯
⎯
50
Max
⎯
⎯
⎯
100
100
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 200V, I
E
= 0
V
CE
= 6.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 20mA, I
B
= 2.0mA
I
C
= 20mA, I
B
= 2.0mA
V
CB
= 20V, f = 1.0MHz, I
E
= 0
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
cb
f
T
⎯
0.5
0.9
3.0
⎯
⎯
V
V
pF
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R
θJA
), power
dissipation rating (P
d
) and power derating curve (figure 1).
4. No purposefully added lead. Halogen and Antimony Free.
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30062 Rev. 11 - 2
1 of 3
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MMBTA42
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
