Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
60
40
6.0
⎯
⎯
20
40
80
100
40
⎯
0.75
⎯
⎯
⎯
1.0
0.1
40
1.0
250
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
100
100
⎯
⎯
⎯
300
⎯
0.40
0.75
0.95
1.2
6.5
30
15
8.0
500
30
⎯
15
20
225
30
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CE
= 35V, V
EB(OFF)
= 0.4V
V
CE
= 35V, V
EB(OFF)
= 0.4V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 150mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
-4
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
V
CE(SAT)
V
BE(SAT)
V
V
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
t
d
t
r
t
s
t
f
pF
pF
kΩ
x 10
⎯
μS
MHz
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 10V, I
C
= 20mA,
f = 100MHz
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= 2.0V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
ns
ns
ns
ns
250
1,000
P
d
, POWER DISSIPATION (mW)
h
FE
, DC CURRENT GAIN
200
T
A
= 125°C
150
100
T
A
= -25°C
T
A
= 25°C
100
10
50
V
CE
= 1.0V
0
0
40
80
120
160
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
200
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.
Collector Current
1,000
DS30272 Rev. 8 - 2
2 of 4
www.diodes.com
MMBT4401T
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
