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MMBT3904-7-F 参数 Datasheet PDF下载

MMBT3904-7-F图片预览
型号: MMBT3904-7-F
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小信号表面贴装晶体管 [NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 83 K
品牌: DIODES [ DIODES INCORPORATED ]
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MMBT3904
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
60
40
6.0
40
70
100
60
30
0.65
1.0
0.5
100
1.0
300
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
8.0
10
8.0
400
40
5.0
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 4)
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
t
d
t
r
t
s
t
f
V
V
pF
pF
-4
x 10
μS
MHz
dB
ns
ns
ns
ns
400
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
R
θJA
= 417
°
C/W
1
I
C
, COLLECTOR CURRENT (A)
0.1
DC
Pw = 100ms
Pw = 10ms
0.01
25
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
0
0.001
T
A
= 25°C
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
MMBT3904
Document number: DS30036 Rev. 18 - 2
2 of 4
December 2008
© Diodes Incorporated