MMBT2222A
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.5
I
C
I
B
= 10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Base-Emitter Turn-On Voltage
vs. Collector Current
100
V
CE
= 5V
T
A
= -50°C
V
CE(SAT)
, COLLECTOR -EMITTER
SATURATION VOLTAGE (V)
0.4
T
A
= 25°C
0.3
T
A
= 150°C
T
A
= 25°C
0.2
T
A
= 150°C
0.1
T
A
= -50°C
0
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
35
f = 1MHz
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
30
25
CAPACITANCE (pF)
20
C
ibo
100
15
10
5
0
0
8 10 12 14 16 18
6
V
R
, REVERSE VOLTS (V)
Fig. 5 Typical Capacitance Characteristics
2
4
20
C
obo
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain Bandwidth Product
vs. Collector Current
100
2.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.1
10
100
1
I
B
, BASE CURRENT (mA)
Fig. 7 Typical Collector Saturation Region
0.01
I
C
= 300mA
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
MMBT2222A
Document number: DS30041 Rev. 12 - 2
3 of 4
www.diodes.com
September 2008
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
