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MMBT2222A_08 参数 Datasheet PDF下载

MMBT2222A_08图片预览
型号: MMBT2222A_08
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小信号表面贴装晶体管 [NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 134 K
品牌: DIODES [ DIODES INCORPORATED ]
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MMBT2222A
Electrical Characteristics
Characteristic (Note 4)
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
I
BL
Min
75
40
6.0
35
50
75
100
40
50
35
0.6
300
Max
10
10
10
20
300
0.3
1.0
1.2
2.0
8
25
4.0
Unit
V
V
V
nA
μA
nA
nA
nA
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
I
C
= 100μA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55°C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 3.0V, I
C
= 150mA, I
B1
= 15mA,
V
BE(OFF)
= 0.5V
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
V
CC
= 30V, I
C
= 150mA, I
B1
= I
B2
= 15mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
f
T
NF
V
V
pF
pF
MHz
dB
t
d
t
r
t
s
t
f
10
25
225
60
ns
ns
ns
ns
4. Short duration pulse test used to minimize self-heating effect.
400
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
Note 1
1,000
T
A
= 125°C
h
FE
, DC CURRENT GAIN
100
T
A
= -25°C
T
A
= 25°C
10
V
CE
= 1.0V
0
0
25
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
1
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
0.1
MMBT2222A
Document number: DS30041 Rev. 12 - 2
2 of 4
www.diodes.com
September 2008
© Diodes Incorporated