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MBR20100CT 参数 Datasheet PDF下载

MBR20100CT图片预览
型号: MBR20100CT
PDF下载: 下载PDF文件 查看货源
内容描述: 20A高压肖特基整流器 [20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER]
分类和应用: 二极管高压局域网
文件页数/大小: 2 页 / 211 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号MBR20100CT的Datasheet PDF文件第2页  
MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant (Note 3)
TO-220AB
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
Min
14.48
10.00
2.54
5.90
2.80
12.70
2.40
0.69
3.54
4.07
1.15
0.30
2.04
Max
15.75
10.40
3.43
6.40
3.93
14.27
2.70
0.93
3.78
4.82
1.39
0.50
2.79
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Ordering Information: See Page 2
Weight: 2.24 grams (approximate)
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@ T
C
= 120°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage Drop
@ I
F
= 10A, T
j
= 125°C
@ I
F
= 10A, T
j
= 25°C
@ I
F
= 20A, T
j
= 125°C
@ I
F
= 20A, T
j
= 25°C
Peak Reverse Current
@ T
A
= 25°C
at Rated DC Blocking Voltage (Note 4)
@ T
A
= 125°C
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
Operating Temperature Range
Storage Temperature Range
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
MBR
2070CT
70
49
MBR
2080CT
80
56
20
150
0.75
0.85
0.85
0.95
0.10
100
1000
2.0
10000
MBR
2090CT
90
63
MBR
20100CT
100
70
Unit
V
V
A
A
V
FM
V
I
RM
C
T
R
θJC
dV/dt
T
j
T
STG
mA
pF
°C/W
V/μs
°C
°C
-55 to +150
-55 to +175
Thermal resistance junction to case mounted on heatsink.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
Short duration pulse test to minimize self-heating effect.
DS30019 Rev. 7 - 2
1 of 2
MBR2070CT-MBR20100CT
© Diodes Incorporated