A Product Line of
Diodes Incorporated
FMMT591A
SOT23 PNP silicon planar medium power transistor
Features
Low equivalent on resistance R
CE(sat)
= 350m
Part Marking Detail -91A
Complementary type -FMMT491A
at 1A
Absolute maximum ratings.
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Peak pulse current
Continuous Collector current
Base current
Power dissipation at Tamb=25oC
Operating an storage temperature range
Symbol
Value
Unit
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
; T
STG
-40
-40
-5
-2
-1
-200
500
-55 to +150
V
V
V
A
A
mA
mW
°C
Electrical characteristics (at T
amb
= 25°C)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-Emitter cut-off current
Collector-Emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
Min
-40
-40
-5
-100
-100
-100
-0.2
-0.35
-0.5
Base-Emitter saturation voltage
Base-Emitter turn-on voltage
Static forward current transfer ratio
V
BE(sat)
V
BE(on)
h
FE
300
300
250
160
30
Transition frequency
Output capacitance
f
T
C
obo
150
10
MHz
pF
-1.1
-1.0
800
Max
Unit
V
V
V
nA
nA
nA
V
V
V
V
V
Conditions
I
C
=-100 A
I
C
=-10mA
(*)
I
E
=-100
A
V
CB
=-30V
V
EB
=-4V
V
CES
=-30V
I
C
=-100mA, I
B
=-1mA
I
C
=-500mA, I
B
=-20mA
I
C
=-1A, I
B
=-100mA
I
C
=-1A, I
B
=-50mA
I
C
=-1A, V
CE
=-5V
I
C
=-1mA,
I
C
=-100mA
I
C
=-500mA
, V
CE
=-5V
I
C
=-1A
I
C
=-2A
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
NOTES:
(*) Measured under pulse conditions. Pulse width=300 s. Duty cycle 2%
© Diodes Incorporated, 2008
www.zetex.com
www.diodes.com
DIODES [ DIODES INCORPORATED ]
