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BSS8402DW-7 参数 Datasheet PDF下载

BSS8402DW-7图片预览
型号: BSS8402DW-7
PDF下载: 下载PDF文件 查看货源
内容描述: 互补对增强型场效应晶体管 [COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 5 页 / 131 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号BSS8402DW-7的Datasheet PDF文件第1页浏览型号BSS8402DW-7的Datasheet PDF文件第2页浏览型号BSS8402DW-7的Datasheet PDF文件第4页浏览型号BSS8402DW-7的Datasheet PDF文件第5页  
N-CHANNEL - 2N7002 SECTION
1.0
V
GS
= 10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
7
10V
T
j
= 25°C
NEW PRODUCT
I
D
,
DRAIN-SOURCE CURRENT (A)
6
5
5.5V
V
GS
= 5.0V
0.8
0.6
4
5.0V
0.4
3
V
GS
= 10V
2
0.2
1
2.1V
0
0
1
2
3
4
5
0
0
0.2
0.4
0.6
0.8
1.0
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs Drain Current
6
V
DS
,
DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
3.0
5
2.5
4
I
D
= 50mA
I
D
= 500mA
2.0
3
2
1.5
V
GS
= 10V,
I
D
= 200mA
1
1.0
-55
0
-30
-5
20
45
70
95
120
145
0
2
4
6
8
10
12
14
16
18
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
250
P
d
, POWER DISSIPATION (mW)
10
V
GS,
GATE SOURCE CURRENT (V)
9
8
7
6
5
4
3
2
1
0
0
0.2
0.4
T
A
= -55°C
T
A
= +25°C
T
A
= +125°C
T
A
= +75°C
V
DS
= 10V
200
150
100
50
0
0
25
50
75
100
125
150
175
200
0.6
0.8
1
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 Max Power Dissipation vs.
Ambient Temperature
I
D
, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
DS30380 Rev. 4 - 2
3 of 5
www.diodes.com
BSS8402DW