BSS84
400
-600
I
D
, DRAIN-SOURCE CURRENT (mA)
25
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
-500
-400
-300
-200
-100
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
0
-1
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
-1.0
10
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
9
8
7
6
5
4
3
2
T
A
= 125
°
C
-0.8
I
D
, DRAIN-CURRENT (A)
-0.6
-0.4
-0.2
1
0
T
A
= 25
°
C
0.0
0
-2
-3
-4
-5
-6
-7
-8
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
-1
0
-2
-3
-4
-5
V
GS
, GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
-1
15
V
GS
= -10V
I
D
= -0.13A
25.0
R
DS(ON)
, ON-RESISTANCE (
Ω
)
R
DS(ON)
, ON-RESISTANCE (
Ω
)
12
20.0
9
15.0
6
10.0
3
5.0
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
0.0
0.0
-0.4
-0.6
-0.8
I
D
, DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
-0.2
-1.0
BSS84
Document number: DS30149 Rev. 14 - 2
2 of 4
February 2010
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
