BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking (See Page 2): K38
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS138
50
50
±20
200
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Source
Gate
Drain
J
E
G
TOP VIEW
S
D
G
H
K
L
D
B
C
A
SOT-23
Dim
A
B
C
D
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
E
G
H
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Characteristic
Drain-Gate Voltage R
GS
£
20KW
Gate-Source Voltage
Drain Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
¾
¾
0.5
¾
100
¾
¾
¾
¾
¾
Typ
75
¾
¾
1.2
1.4
¾
¾
¾
¾
¾
¾
Max
¾
0.5
±100
1.5
3.5
¾
50
25
8.0
20
20
Unit
V
µA
nA
V
W
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50W
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 10V, I
D
= 0.22A
V
DS
= 25V, I
D
= 0.2A, f = 1.0KHz
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30144 Rev. 11 - 2
1 of 5
www.diodes.com
BSS138
ã
Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
