BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
SOT-363
A
D
2
G
1
S
1
Dim
A
B
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
·
·
·
·
·
·
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KXX: Product marking code
YY: Date code
Marking Code: K38
Weight: 0.006 grams (approx.)
K
J
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS138DW
50
50
±20
200
200
625
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
¾
¾
0.5
¾
100
¾
¾
¾
¾
¾
Typ
75
¾
¾
1.2
1.4
¾
¾
¾
¾
¾
¾
Max
¾
0.5
±100
1.5
3.5
¾
50
25
8.0
20
20
Unit
V
µA
nA
V
W
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
=-250mA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
£
300ms, duty cycle
£
2%.
3. R
GS
£
20KW.
DS30203 Rev. B-2
1 of 1
KXX YY
S
2
G
2
D
1
Mechanical Data
KXX YY
C
D
F
H
J
M
0.65 Nominal
H
K
L
M
D
F
L
All Dimensions in mm
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50W
BSS138DW
DIODES [ DIODES INCORPORATED ]
