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BSS138DW_1 参数 Datasheet PDF下载

BSS138DW_1图片预览
型号: BSS138DW_1
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 98 K
品牌: DIODES [ DIODES INCORPORATED ]
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BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
S
2
G
2
D
1
D
2
A
G
1
S
1
SOT-363
Dim
B C
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
A
B
C
D
M
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ T
A
= 25°C unless otherwise specified
S
2
D
2
G
H
K
0.65 Nominal
F
H
J
K
L
M
a
J
D
G
1
S
1
F
L
G
2
D
1
All Dimensions in mm
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
V
DSS
V
DGR
Continuous
Continuous
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
BSS138DW
50
50
±20
200
200
625
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Note:
1.
2.
3.
4.
@ T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
¾
¾
0.5
¾
100
¾
¾
¾
¾
¾
Typ
75
¾
¾
1.2
1.4
¾
¾
¾
¾
¾
¾
Max
¾
0.5
±100
1.5
3.5
¾
50
25
8.0
20
20
Unit
V
µA
nA
V
W
mS
pF
pF
pF
ns
ns
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50W
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 250mA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250mA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration test pulse used to minimize self-heating effect.
R
GS
£
20KW.
No purposefully added lead.
DS30203 Rev. 8 - 2
1 of 5
www.diodes.com
BSS138DW
ã
Diodes Incorporated