BSS123
0.7
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
0.4
0.3
0.2
2.0
NEW PRODUCT
1.6
1.2
0.1
0
0
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
1
5
0.8
0.1
0.3
0.4
0.5
0.6
0.2
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
V
GS(th),
NORMALIZED THRESHOLD VOLTAGE
1.2
2.2
R
DS(ON),
NORMALIZED ON-RESISTANCE
V
DS
= V
GS
I
D
= 250µA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
V
GS
= 10V
I
D
= 170m
1.1
1
0.9
0.8
0.7
-50
25
50
0
-25
75 100 125 150
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
75 100 125 150
-25
25
0
50
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
50
40
C, CAPACITANCE (pF)
30
20
C
iss
10
C
oss
C
rss
0
0
20
10
5
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
25
BSS123
Document number: DS30366 Rev.8 - 2
2 of 3
www.diodes.com
May 2008
© Diodes Incorporated
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