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BSS123 参数 Datasheet PDF下载

BSS123图片预览
型号: BSS123
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 69 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号BSS123的Datasheet PDF文件第2页浏览型号BSS123的Datasheet PDF文件第3页  
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
SOT-23
Dim
A
D
NEW PRODUCT
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
A
B
B
C
C
D
E
G
H
M
Mechanical Data
·
·
·
·
·
·
·
·
E
G
TOP VIEW
S
D
G
H
K
J
L
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K23 (See Page 3)
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approx.)
J
K
L
M
a
Drain
Gate
All Dimensions in mm
Source
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Continuous
Pulsed
V
GSS
I
D
I
DM
P
d
R
qJA
T
j
, T
STG
BSS123
100
100
±20
170
680
300
417
-55 to +150
Units
V
V
V
mA
mW
°C/W
°C
Characteristic
Drain-Gate Voltage R
GS
£
20KW
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30366 Rev. 3 - 2
1 of 3
www.diodes.com
BSS123