BCP 51/ 52/ 53
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
All versions
Static Forward Current Transfer Ratio (Note 9)
10 gain grp
16 gain grp
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Transition Frequency
Output Capacitance
Notes:
Symbol
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-45
-60
-100
-45
-60
-80
-5
—
—
25
40
25
63
100
—
—
150
—
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -100µA
—
—
—
—
—
—
—
—
—
-0.1
-20
-20
—
V
V
μA
nA
I
C
= -10mA
I
E
= -10µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
EB
= -4V
I
C
= -5mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, V
CE
= -2V
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz
250
—
h
FE
—
V
CE(sat)
V
BE(on)
f
T
C
obo
—
—
—
—
—
—
160
250
-0.5
-1.0
—
25
V
V
MHz
pF
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
1.0
I
B
= 10mA
500
V
CE
= -5V
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 8mA
400
h
FE
, DC CURRENT GAIN
I
B
= 6mA
T
A
= 150°C
0.6
I
B
= 4mA
300
T
A
= 85°C
0.4
I
B
= 2mA
200
T
A
= 25°C
0.2
100
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
4 of 7
March 2014
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
