@ TA =25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
BC856
BC857
BC858
-80
-50
-30
—
—
—
—
—
—
V(BR)CBO
V
BC856
BC857
BC858
-65
-45
-30
—
—
—
—
—
—
IC = 10mA, IB = 0
V(BR)CEO
V(BR)EBO
V
V
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
IE = 1mA, IC = 0
-5
—
—
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
Small Signal Current Gain
Current Gain Group A
—
—
—
—
—
—
—
—
—
—
—
—
200
330
600
2.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
B
C
Input Impedance
Current Gain Group A
kW
kW
kW
µS
µS
µS
—
B
C
VCE = -5.0V, IC = -2.0mA,
f = 1.0kHz
4.5
8.7
Output Admittance
Current Gain Group A
18
B
C
30
60
-4
Reverse Voltage Transfer Ratio
Current Gain Group A
1.5x10
-4
-4
B
C
2x10
3x10
—
—
DC Current Gain (Note 3)
Current Gain Group A
125
220
420
180
290
520
250
475
800
hFE
B
C
VCE = -5.0V, IC = -2.0mA
—
I
C = -10mA, IB = -0.5mA
-75
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
—
mV
mV
mV
IC = -100mA, IB = -5.0mA
-250
I
C = -10mA, IB = -0.5mA
—
—
-700
-850
—
IC = -100mA, IB = -5.0mA
V
CE = -5.0V, IC = -2.0mA
-600
—
-650
—
-750
-820
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
VCE = -5.0V, IC = -10mA
VCE = -80V
ICES
ICES
ICES
ICBO
ICBO
BC856
BC857
BC858
—
—
—
—
—
—
—
—
—
—
-15
-15
-15
-15
-4.0
nA
nA
nA
nA
µA
VCE = -50V
VCE = -30V
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
100
—
200
3
—
—
10
MHz
pF
VCB = -10V, f = 1.0MHz
VCE = -5.0V, IC = 200µA,
CCBO
NF
R
S = 2kW, f = 1kHz,
—
2
dB
Df = 200Hz
Notes: 3. Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 12 - 2
2 of 3
BC856A-BC858C
DIODES [ DIODES INCORPORATED ]
