BC856A-BC858C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BC856
Collector Emitter Cutoff Current
BC857
BC858
BC856A / BC857A / BC858A
Small Signal Current Gain
BC856B / BC857B / BC858B
(Note 10)
BC857C / BC858C
BC856A / BC857A / BC858A
Input Impedance (Note 10)
BC856B / BC857B / BC858B
BC857C / BC858C
BC856A / BC857A / BC858A
Output Admittance
BC856B / BC857B / BC858B
(Note 10)
BC857C / BC858C
BC856A / BC857A / BC858A
Reverse Voltage Transfer
BC856B / BC857B / BC858B
Ratio (Note 10)
BC857C / BC858C
BC856A / BC857A / BC858A
DC Current Gain (Note 10)
BC856B / BC857B / BC858B
BC857C / BC858C
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Noise Figure
Notes:
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
Min
-80
-50
-30
-65
-45
-30
-5
—
—
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -10µA
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
-4
1.5x10
-4
2x10
-4
3x10
180
290
520
-75
-250
-650
—
-700
-850
3
200
2
—
—
-15
-4
-15
-15
-15
—
V
V
µA
nA
I
C
= -10mA
I
E
= -1µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
h
fe
—
—
h
ie
—
—
kΩ
I
C
= -2.0mA, V
CE
= -5V
f = 1.0kHz
h
oe
—
—
µS
h
re
—
125
220
420
—
-600
—
—
—
100
—
—
250
475
800
-300
-650
-750
-820
—
—
—
10
—
h
FE
V
CE(sat)
V
BE(on)
V
BE(sat)
C
obo
f
T
NF
—
mV
mV
mV
pF
MHz
dB
I
C
= -2.0mA, V
CE
= -5V
I
C
= - 10mA, I
B
= -0.5mA
I
C
= - 100mA, I
B
= -5.0mA
I
C
= -2mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CB
= -10V, f = 1.0MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
V
CE
= -5V, I
C
= -200µA
R
S
= 2kΩ, f = 1kHz
∆f
= 200Hz
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
BC856A – BC858C
Document Number: DS112072 Rev. 22 - 2
4 of 7
Feb. 2013
© Diodes Incorporated