BC856AS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
•
•
•
•
•
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Complementary NPN Types Available (BC846AS)
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 4 and 5)
A
SOT-363
Dim
B C
NEW PRODUCT
Min
0.10
1.15
2.00
0.30
1.80
⎯
0.90
0.25
0.10
0°
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
A
B
C
Mechanical Data
•
•
•
•
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Pin Connections: See Diagram
Marking Codes: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
H
K
M
D
F
H
J
K
L
M
α
0.65 Nominal
J
C
1
B
2
E
2
D
F
L
6
5
4
1
E
1
2
B
1
3
C
2
All Dimensions in mm
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
θ
JA
T
j
, T
stg
Value
-80
-65
-5.0
-100
-200
-200
200
625
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 2)
(Note 2)
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
@T
A
= 25°C unless otherwise specified
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CES
I
CBO
I
CBO
f
T
C
CB
Min
-80
-65
-5
125
—
—
—
-600
—
—
—
—
100
—
Typ
—
—
—
180
-75
-250
-700
-850
-650
—
—
—
—
—
3
Max
—
—
—
250
-300
-650
—
-750
-820
-15
-15
-4.0
—
—
Unit
V
V
V
—
mV
mV
mV
nA
nA
µA
MHz
pF
Test Condition
I
C
= 10μA, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1μA, I
C
= 0
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30834 Rev. 7 - 2
1 of 3
www.diodes.com
BC856AS
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
