Electrical Characteristics
Characteristic
@ T
A
=25°C unless otherwise specified
Symbol
BC856
BC857
BC858
BC856
BC857
BC858
V
(BR)CBO
Min
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
—
—
—
—
—
—
—
—
125
220
420
—
—
—
-600
—
—
—
—
—
—
100
—
—
Typ
—
—
—
—
—
—
—
200
330
600
2.7
4.5
8.7
18
30
60
1.5x10
-4
2x10
-4
3x10
-4
180
290
520
-75
-250
-700
-850
-650
—
—
—
—
—
—
200
3
2
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
250
475
800
-300
-650
—
-750
-820
-15
-15
-15
-15
-4.0
—
—
10
Unit
V
Test Condition
I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage (Note 3)
Collector-Emitter Breakdown Voltage (Note 3)
V
(BR)CEO
V
(BR)EBO
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
V
V
—
—
—
kW
kW
kW
µS
µS
µS
—
—
—
—
mV
mV
mV
nA
nA
nA
nA
µA
MHz
pF
dB
I
C
= 10mA, I
B
= 0
I
E
= 1mA, I
C
= 0
Emitter-Base Breakdown Voltage (Note 3)
H-Parameters
Small Signal Current Gain
Input Impedance
Output Admittance
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
V
CE
= -5.0V, I
C
= -2.0mA,
f = 1.0kHz
DC Current Gain (Note 3)
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -80V
V
CE
= -50V
V
CE
= -30V
V
CB
= -30V
V
CB
= -30V, T
A
= 150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5.0V, I
C
= 200µA,
R
S
= 2kW, f = 1kHz,
Df
= 200Hz
Collector-Emitter Saturation Voltage (Note 3)
Base-Emitter Saturation Voltage (Note 3)
Base-Emitter Voltage (Note 3)
Collector-Cutoff Current (Note 3)
BC856
BC857
BC858
I
CES
I
CES
I
CES
I
CBO
I
CBO
f
T
C
CBO
NF
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
3. Short duration pulse test used to minimize self-heating effect.
DS11207 Rev. 12 - 2
2 of 3
BC856A-BC858C