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BC847BS_2 参数 Datasheet PDF下载

BC847BS_2图片预览
型号: BC847BS_2
PDF下载: 下载PDF文件 查看货源
内容描述: 双NPN小信号表面贴装晶体管 [DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 106 K
品牌: DIODES [ DIODES INCORPORATED ]
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BC847BS
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Ideally Suited for Automated Insertion
For Switching and AF Amplifier Applications
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4 and 5)
A
SOT-363
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
B
C
D
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: K1F, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams
K
0.65 Nominal
H
M
F
H
J
K
D
F
L
J
C
2
B
1
L
M
α
E
1
All Dimensions in mm
E
2
B
2
C
1
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
(Note 1)
(Note 1)
P
d
R
θ
JA
T
j
, T
STG
Value
50
45
5.0
100
200
200
200
500
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE
I
CBO
I
CBO
I
EBO
f
T
C
CBO
C
EBO
Min
200
580
100
Typ
755
665
2.0
11
Max
450
100
400
700
15
5.0
100
3.0
Unit
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CB
= 30V, I
E
= 0
V
CB
= 30V, T
j
= 125°C
V
EB
= 5.0V, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
EB
= 0.5V, f = 1.0MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30222 Rev. 12 - 2
1 of 3
www.diodes.com
BC847BS
© Diodes Incorporated