BC847BS
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Notes:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CBO
I
EBO
f
T
C
CBO
C
EBO
Min
50
45
6
200
—
—
580
—
—
—
100
—
—
Typ
—
—
—
—
—
755
665
—
—
—
—
2.0
11
Max
—
—
—
450
100
400
—
700
20
5.0
100
—
3.0
—
Unit
V
V
V
—
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
I
C
= 100A, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100A, I
C
= 0
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CB
= 40V
V
CB
= 40V, T
A
= +125°C
V
EB
= 5.0V, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
EB
= 0.5V, f = 1.0MHz
6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
7. Short duration pulse test used to minimize self-heating effect.
BC847BS
Document number: DS30222 Rev. 13 - 2
2 of 5
February 2013
© Diodes Incorporated