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BC807-40 参数 Datasheet PDF下载

BC807-40图片预览
型号: BC807-40
PDF下载: 下载PDF文件 查看货源
内容描述: PNP表面贴装晶体管 [PNP SURFACE MOUNT TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 114 K
品牌: DIODES [ DIODES INCORPORATED ]
 浏览型号BC807-40的Datasheet PDF文件第2页浏览型号BC807-40的Datasheet PDF文件第3页  
BC807-16/ -25/ -40
PNP SURFACE MOUNT TRANSISTOR
Features
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary NPN Types Available (BC817)
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
A
C
B
B
E
TOP VIEW
SOT-23
Dim
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
A
B
C
D
E
E
D
G
H
K
J
L
M
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe)
Pin Connections: See Diagram
Ordering Information: See Page 3
Marking Information: See Page 3
- BC807-16 5A, K5A
- BC807-25 5B, K5B
- BC807-40 5C, K5C
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
G
H
J
K
L
C
M
α
All Dimensions in mm
B
E
Maximum Ratings
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
θJSB
R
θJA
T
j
, T
STG
Value
-45
-5.0
-500
-1000
-1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Min
100
160
250
60
100
170
100
Typ
Max
250
400
600
-0.7
-1.2
-100
-5.0
-100
12
Unit
Test Condition
V
CE
= -1.0V, I
C
= -100mA
V
CE
= -1.0V, I
C
= -300mA
Characteristic (Note 2)
Symbol
Current Gain Group -16
-25
-40
DC Current Gain
h
FE
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Voltage
V
BE
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1.
2.
3.
4.
I
CES
I
EBO
f
T
C
CBO
V
V
nA
µA
nA
MHz
pF
I
C
= -500mA, I
B
= -50mA
V
CE
= -1.0V, I
C
= -300mA
V
CE
= -45V
V
CE
= -25V, T
j
= 150°C
V
EB
= -4.0V
V
CE
= -5.0V, I
C
= -10mA,
f = 50MHz
V
CB
= -10V, f = 1.0MHz
Device mounted on ceramic substrate 0.7mm; 2.5cm
2
area.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS11208 Rev. 17 - 2
1 of 3
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BC807-16/-25/-40
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