400
See Note 1
1000
300
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
T
A
= 25
°
C
f = 20MHz
P
d
, POWER DISSIPATION (mW)
-V
CE
= 5.0V
1.0V
200
100
100
0
0
100
T
SB
, SUBSTRATE TEMPERATURE (
°
C)
Fig. 1, Power Derating Curve
200
10
1
10
100
1000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Gain-Bandwidth Product vs Collector Current
1000
-V
CE
= 1V
150
°
C
0.5
-V
CESAT
, COLLECTOR SATURATION VOLTAGE (V)
typical
limits
at T
A
= 25
°
C
0.4
h
FE
, DC CURRENT GAIN
-I
C
/ -I
B
= 10
25
°
C
-50
°
C
100
0.3
0.2
25
°
C
0.1
150
°
C
-50
°
C
0
0.1
1
10
100
1000
10
0.1
1
10
100
1000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4, DC Current Gain vs Collector Current
100
500
3.2
2.8
2.4
-I
C
, COLLECTOR CURRENT (mA)
400
-I
C
, COLLECTOR CURRENT (mA)
0.35
2
1.8
1.6
1.4
1.2
80
0.3
0.25
300
60
0.2
200
0.8
0.6
40
0.15
100
0.4
0.1
20
-I
B
= 0.05mA
-I
B
= 0.2mA
0
0
1
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5, Typical Emitter-Collector Characteristics
2
0
0
10
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6, Typical Emitter-Collector Characteristics
20
DS11208 Rev. 9 - 2
2 of 3
BC807-16/-25/-40
DIODES [ DIODES INCORPORATED ]
