Transys
Electronics
L I M I T E D
SOT-23 Formed SMD Package
BAW56
SILICON PLANAR EPITAXIAL HIGH–SPEED DIODES
Silicon planar high-speed switching
Common Anode
Marking
BAW56 = A1
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN m
m
Pin configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
2
1
3
ABSOLUTE MAXIMUM RATINGS
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Junction temperature
Forward voltage at I
F
= 50 mA
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω
;
measured at I
R
= 1 mA
Recovery charge when switched from
I
F
= 10 mA to V
R
= 5 V; R
L
= 100
Ω
V
R
V
RRM
I
FRM
T
j
V
F
max.
max.
max.
max.
<
75
85
450
150
1,0
V
V
mA
°C
V
t
rr
Q
s
<
<
4 ns
45 pC
RATINGS (per diode)
(at T
A
= 25°C unless otherwise specified)
Limiting values
max.
Continuous reverse voltage
V
R
Repetitive peak reverse voltage
V
RRM
max.
75 V
85 V