BAW56
Forward current (d.c.)
Repetitive peak forward current
Non–repetitive peaK forward current
(per crystal}
t = 1
µs
t = 1 ms
t=1s
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient
I
F
I
FRM
max.
max.
215 mA
450 mA
I
FSM
I
FSM
I
FSM
T
stg
T
j
max.
max.
max.
4 A
1 A
0,5 A
–55 to +150 °C
max.
150 °C
R
thj–a
=
500
KW
/
CHARACTERISTICS (per diode) (at T
A
= 25°C unless otherwise specified)
T
j
= 25 °C unless otherwise specified
Forward voltage
V
F
<
I
F
= 1 mA
V
F
<
I
F
= 10 mA
V
F
<
I
F
= 50 mA
V
F
<
I
F
= 150 mA
Reverse current
I
R
<
V
R
= 25V; T
j
= 150 °C
I
R
<
V
R
= 75 V
I
R
<
V
R
= 75V; T
j
= 150 °C
Diode capacitance
C
d
<
V
R
= 0; f = 1 MHz
Forward recovery voltage when switched to
V
fr
<
I
F
= 10mA; t
r
= 20ns
715
855
1000
1250
mV
mV
mV
mV
30
µA
1,0
µA
50
µA
2,0 pF
1,75 V
DIODES [ DIODES INCORPORATED ]
