ELECTRICAL CHARACTERISTICS (each diode) (T
A
=25
O
C, unless otherwise noted)
P A R A M E TE R
R e ve rs e B re a k d o w n V o l a g e
t
R e ve rs e C u rre n t
S ym b o l
V
(B R )
I
R
Te s t C o n d itio n
I = 1 0 0 uA
R
V
R
=75 V
V
R
= 7 5 V ,T
J
= 1 5 0
I =1m A
F
I =10m A
F
I =50m A
F
I =150m A
F
V
R
= 0 V , f= 1 M H
Z
I = I = 1 0 m A , R
L
= 1 0 0
Ω
F
R
MI .
N
75
0 .0 0 2
8 .0
5
80
0 .9
1 .0
1 .1
1 .2 5
2 .0
3 .0
TYP.
M AX.
U n its
V
nA
O
C
F o rw a rd V o l a g e
t
V
F
V
To ta l C a p a c ita n c e
R e ve rs e R e c o ve ry T im e
C
T
T
R R
pF
us
CHARACTERISTIC CURVES (each diode)
10
1000
I
R
, Reverse Leakage(nA)
1.0
I
F
, Forward current (mA)
100
T
A
=-25 C
O
0.1
V
R
=75V
10
0.01
1.0
T
A
=75 C
O
T
A
=125 C
O
T
A
=25 C
O
0.001
0
50
100
150
200
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Tj, Junction Temperature (Deg C)
V
F
, Forward Voltage (V)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
1.4
C
T
, Total Capacitance (pF)
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V
R
, Reverse Voltage (V)
Fig. 3- Total capacitance vs. Reverse Voltage
STAD-NOV.15.2004
PAGE . 2
DIODES [ DIODES INCORPORATED ]
