D
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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.030
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 25 °C
0.025
0.020
0.015
0.1
0.010
T
J
= 125 °C
0.01
T
J
= - 50 °C
0.005
T
J
= 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
160
- 0.1
Power (W)
120
- 0.4
I
D
= 1 mA
80
- 0.7
I
D
= 250
µA
- 1.0
- 50
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power (Junction-to-Ambient)
100
µs
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
100 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
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