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DTU15N10 参数 Datasheet PDF下载

DTU15N10图片预览
型号: DTU15N10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道100 V( DS ) MOSFET TrenchFET功率MOSFET, [N-Channel 100 V (D-S) MOSFET TrenchFET Power MOSFETS]
分类和应用:
文件页数/大小: 7 页 / 1276 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 10 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
c
DTU15N10
Symbol
Test Conditions
Min.
100
2
Typ.
a
Max.
Unit
V
± 100
1
50
250
µA
A
0.077
0.095
0.190
0.250
0.081
25
900
0.100
S
nA
15
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
115
70
20
25
pF
V
DS
= 75 V, V
GS
= 10 V, I
D
= 15 A
1
5.5
7
3.2
8
12
55
25
45
15
35
17
30
nC
V
DD
= 75 V, R
L
= 5
I
D
15 A, V
GEN
= 10 V, R
G
= 2.5
ns
Source-Drain Diode Ratings and Characteristic
(T
C
= 25 °C)
A
V
ns
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, dI/dt = 100 A/µs
0.9
55
1.5
85
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2