D
www.daysemi.jp
2400
2000
I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1600
1200
C
oss
800
400
0
10
0
10
1
C
rss
10
1
150
°
C
25
°
C
10
0
0.6
91114_07
V
GS
= 0 V
0.8
1.0
1.2
1.4
91114_05
V
DS,
Drain-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 3.2 A
V
DS
= 300 V
10
3
5
2
Operation in this area limited
by R
DS(on)
16
I
D
, Drain Current (A)
10
2
5
2
V
DS
= 240 V
12
V
DS
= 180 V
10
5
2
10
µs
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
2
5
8
1
5
2
4
For test circuit
see figure 13
0.1
5
2
0
0
91114_06
10
-2
8
16
24
32
40
91114_08
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
4
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