DT
www.daysemi.jp
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.5 A
12
2.2
3.6
245
330
860
510
365
495
1300
765
ns
18
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 6.5 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
DS
= 10 V, I
D
= 6.5 A
I
S
= 1.5 A, V
GS
= 0 V
30
0.0165
0.023
30
0.71
1.2
0.022
0.030
0.6
1.6
± 200
1
25
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
10000
I
GSS
- Gate Current (mA)
8
I
GSS
- Gate Current (A)
1000
100
6
10
T
J
= 150 °C
4
1
T
J
= 25 °C
2
0.1
0
0
3
6
9
12
15
18
0.01
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
2
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