TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
100
I
D
= 4.9 A
1.7
I
S
-
Source
Current (A)
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.1
10
T
J
= 150
°C
1
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DTM4953
R
DS(on)
- On-Resistance (Normalized)
0.1
T
J
= 25
°C
0.8
0.01
0.5
- 50 - 25
0.001
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.25
1.0
Source Drain Diode Forward Voltage
0.20
0.7
I
D
= 250 μA
R
DS(on)
- On-Resistance (Ω)
V
GS(th)
Variance (V)
0.15
0.4
I
D
= 5 mA
0.1
0.10
T
J
= 150
°C
0.05
T
J
= 25
°C
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
- 30
I
D
= 1 mA
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
- 32
- 34
- 36
- 38
- 40
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
4
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