TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.40
0.35
R
DS(on)
- On-Resistance (Ω)
800
0.30
C - Capacitance (pF)
0.25
0.20
0.15
0.10
200
0.05
0.00
0
5
10
15
20
25
0
0
C
rss
10
20
30
C
oss
V
GS
= 4.5 V
V
GS
= 10 V
1000
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DTM4948
C
iss
600
400
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
DS
= 30 V
I
D
= 3.1 A
8
R
DS(on)
- On-Resistance
(Normalized)
1.8
1.6
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
- 50
2.2
2.0
V
GS
= 10 V
I
D
= 3.1 A
Capacitance
V
GS
- Gate-to-Source Voltage (V)
6
4
2
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
20
T
J
= 150
°C
10
I
S
- Source Current (A)
R
DS(on)
- On-Resistance (Ω)
0.40
0.35
0.30
0.25
On-Resistance vs. Junction Temperature
I
D
= 3.1 A
0.20
0.15
0.10
0.05
T
J
= 25
°C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
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