TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.040
0.035
R
DS(on)
- On-Resistance (Ω)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
6
12
18
24
30
0
0
4
8
V
GS
= 4.5 V
1000
C
rss
C
oss
V
GS
= 1.8 V
V
GS
= 2.5 V
C - Capacitance (pF)
6000
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DTM4913
5000
C
iss
4000
3000
2000
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
DS
= 10 V
I
D
= 9.4 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.4
Capacitance
1.6
V
GS
= 4.5 V
I
D
= 9.4 A
V
GS
- Gate-to-Source Voltage (V)
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
40
0.040
0.035
R
DS (on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
10
0.030
0.025
On-Resistance vs. Junction Temperature
I
D
= 3 A
I
D
= 9.4 A
0.020
0.015
0.010
0.005
T
J
= 25
°C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
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